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TGA8810-SCC
Gain Block Amplifier
q q q q q q
PHOTO ENLARGEMENT
2 to 10 -GHz Frequency Range Operates from Single 5 -V Supply Unconditionally Stable 17-dB Typical Gain Typical 0.6-dB Gain Flatness
8810
1,8796 x 1,6510 x 0,1524 mm (0.074 x 0.065 x 0.006 in.)
DESCRIPTION
The TriQuint TGA8810 -SCC is a self-biased general purpose amplifier. Two gain stages employ shunt feedback to pr oduce flat gain to 10 -GHz. Output power at 1- dB gain compression is typically 17-dBm and noise figur e is 6 -dB. The TGA8810 -SCC uses on -chip DC blocks to allow dir ect cascading. Three different on-chip self-bias resistors provide the flexibility of selecting bias cur rent and RF per formance. The TGA8810-SCC is available in chip for m and is r eadily assembled using automated equipment. Bond pad and backside metallization is gold plated for compatibil ity with eutectic alloy attachment methods as well as the ther mocompression and thermosonic wire-bonding processes.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8810-SCC
TYPICAL SMALL SIGNAL POWER GAIN
20 19 18
VD1 = 5 V VD2 = 5 V T A = 25 C
17
Gain (dB)
16
15 14 13 12
11 10 2 3 4 5 6 7 8 9 10
Frequency (GHz)
TYPICAL NOISE FIGURE
7 6
VD1 = 5 V VD2 = 5 V T A = 25 C
Noise Figure (dB)
5 4
3 2
1 0 2 3 4 5 6 7 8 9 10
Frequency (GHz)
TYPICAL OUTPUT POWER
20 19
P1dB
Output Power (dBm)
VD1 = 5 V VD2 = 5 V T A = 25 C
18
17 16 15 14 13 12 2 3 4 5 6 7 8 9 10
Frequency (GHz)
2
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8810-SCC
TYPICAL RETURN LOSS
0
VD1 = 5 V VD2 = 5 V T A = 25 C
10
Return Loss (dB)
20
30
40
Input Output
50 2 3 4 5 6 7 8 9 10
Frequency (GHz)
ABSOLUTE MAXIMUM RATINGS
Positive supply voltage, VD1, VD2 ........................................................................................................ 8.5 V Power dissipation at (or below) 25C base -plate temperature, P * ...................................................... D 2.4 W
Operating channel temperature, TCH ** .............................................................................................. 150C Mounting temperature (30 sec), TM .................................................................................................. 320C Storage temperature range, TSTG ............................................................................................ - 65 to 150C
Ratings over channel temperatur e range, TCH (unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" m ay cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond those indicated under "RF Characteristics" is not implied. E xposure to absolute maximum rated conditions for extended periods may af fect device reliability. * For operation above 25C base -plate temperature, derate linearly at the rate of 5 mW/C. ** Operating channel temperature, TCH, directly af fects the device MTTF. For maximum life, it is r ecommended that channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
3
TGA8810-SCC
TYPICAL S-PARAMETERS
Frequency (GHz) MAG
S11 ANG() MAG
S21 ANG() MAG
S12 ANG() MAG
S22 ANG()
GAIN (dB)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5
0.38 0.29 0.36 0.40 0.36 0.33 0.31 0.30 0.30 0.29 0.31 0.33 0.33 0.32 0.29 0.23 0.15 0.11 0.24 0.44
0.64
-104 -125 -134 -156 -169 -173 -175 -175 -176 179 -178 179 173 166 156 140 110 33 -37 -75 -106
0.03 0.99 4.24 6.88 7.49 7.58 7.59 7.53 7.36 7.10 7.02 6.98 6.86 6.90 7.01 7.22 7.48 7.75 7.87 7.39
6.34
-148 -177 114 42 -8 -45 -77 -106 -133 -157 179 156 134 113 90 67 43 15 -15 -49 -83
0.001 0.003 0.009 0.011 0.009 0.007 0.006 0.004 0.002 0.002 0.001 0.001 0.002 0.003 0.004 0.005 0.007 0.009 0.011 0.013 0.016
-13 180 122 72 43 27 10 9 5 2 -53 -152 -178 169 173 168 177 175 170 162 153
0.92 0.79 0.48 0.07 0.21 0.27 0.29 0.28 0.26 0.22 0.17 0.12 0.07 0.04 0.02 0.00 0.02 0.03 0.06 0.09 0.11
-130 165 111 125 180 164 150 137 126 115 109 110 111 120 140 2 0 24 52 58 51
-30.8 -0.1 12.5 16.8 17.5 17.6 17.6 17.5 17.3 17.0 16.9 16.9 16.7 16.8 16.9 17.2 17.5 17.8 17.9 17.4 16.0
VD1 = VD2 = 5 V, TA = 25C
Reference planes for S -parameter data include bondwir es as specified in the "Recommended Assembly Diagram".
RF CHARACTERISTICS
GP SWR(in) SWR(out) P 1dB NF G p
PARAMETER
TEST CONDITIONS
TYP
UNIT
Small-signal power gain Input standing wave ratio Output standing wave ratio Output power at 1-dB gain compression Noise figure Gain flatness Gain temperature coefficient TBP = -40C to 90C
f = 2 to 10 GHz 17 f = 2 to 10 GHz 1.9:1 f = 2 to 10 GHz 1.2:1 f = 2 to 10 GHz f = 2 to 10 GHz f = 2 to 10 GHz f = 2 GHz f = 6 GHz f = 10 GHz f = 2 GHz f = 5 GHz f = 8 GHz 17 6
dB dBm dB
IP3
Output third-order intercept point
0.6 dB -0.01 -0.02 dB/C -0.02 24 26 dBm 25
V D1 = VD2 = 5 V, TA = 25C (assembled per Equivalent Schematic unless other wise noted)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
4
TGA8810-SCC
DC CHARACTERISTICS
I D = I D1+ I D2
PARAMETER
TEST CONDITIONS
TYP
UNIT
Total positive supply current
T A = 25C
V = V D2 = 5 V D1
90
mA
EQUIVALENT SCHEMATIC
Bond Pad #2
VD1
Bond Pad #3
VD2 RF Output FET 2 500 m
RF Input
FET 1 500 m
0.1 pF C1 C2 0.2 pF
5
5
9 9 6 RS12 RS13 RS11 6 RS21 RS23 RS22
RS11, RS12, RS13, RS21, RS22, and RS23 provide the flexibility of selecting bias cur rent and RF per formance. C1 and C2 can be used in tuning for impr oved input match. For best r esults, use the assembly configuration shown in the "Recommended Assembly Diagram" on page 6.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
5
TGA8810-SCC
RECOMMENDED ASSEMBLY DIAGRAM
VD2
68 pF
T.I.P.N. 3022039-1 ~2.3nH
RF Input
RF Output
T.I.P.N. 3022039-1 ~2.3nH
68 pF
VD1
RF connections: bond using two 1 -mil diameter, 20 to 25 -mil-length gold bond wir es at both RF Input and RF Output for optimum RF per formance. Close placement of exter nal components is essential to stability. Bond using 0 .7-mil diameter wires on bond pads 7, 11, 13, and 14 since they ar e less than the .004 x .004 needed for 1-mil diameter wire. Two on-chip to on -chip wire bonds are needed for bond pads 1, 2, 3, and 13.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
6
TGA8810-SCC
MECHANICAL DRAWING
1,6510 (0.0650)
0,1245 (0.0049)
1,3208 (0.0520)
1,3970 (0.0550)
1,7475 (0.0688) 1,5240 (0.0600) 4
2 3
1,4757 (0.0581) 1,3157 (0.0518)
0,9881 (0.0389)
1
5
1,0185 (0.0401)
0,7620 (0.0300) 0,6223 (0.0245)
14 13
0,1600 (0.0063) 0
12
11
10
9
8
7
6
0,1499 (0.0059)
0
0,1854 (0.0073)
0,4953 (0.0195)
0,8306 (0.0327)
1,1379 (0.0448)
1,7501 (0.0689) (0.0740)
0,1118 (0.0044)
0,3378 (0.0133)
0,6604 (0.0260)
0,9855 (0.0388)
Units: millimeters (inches) Thickness: 0,1524 (0.006) (r eference only) Chip-edge-to-bond-pad dimensions are shown to center of bond pad. Chip size tolerance: 0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond pad pad pad pad pad pad pad pad pad pad pad pad pad pad #1 (RF Input): #2 : #3 : #4 (VD2 ): #5 (RF Output): #6 (RS22 ): #7 (RS23 ): #8 (RS21 ): #9 (VD1 ): #10 (RS11): #11 (RS13 ): #12 (RS12 ): #13 (C2): #14 (C1): 0,1016 x 0,1778 (0.0040 x 0.0070) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,0940 x 0,2540 (0.0037 x 0.0100) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,1016 x 0,0787 (0.0040 x 0.0031) 0,1067 x 0,1016 (0.0042 x 0.0040) 0,1016 x 0,1041 (0.0040 x 0.0041) 0,1067 x 0,1016 (0.0042 x 0.0040) 0,1016 x 0,0787 (0.0040 x 0.0031) 0,1016 x 0,1016 (0.0040 x 0.0040) 0,0762 x 0,0762 (0.0030 x 0.0030) 0,0762 x 0,0762 (0.0030 x 0.0030)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
7

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